The tricritical point of a ferroelectric semiconductor in the field of strong electromagnetic wave

Autor: V. I. Litvinov, K. A. Valuyev, K. D. Tovstyuk
Rok vydání: 1981
Předmět:
Zdroj: Ferroelectrics. 34:161-164
ISSN: 1563-5112
0015-0193
DOI: 10.1080/00150198108238718
Popis: Within a two-band model of narrow-gap semiconductor, the interaction between electrons and transverse optical (TO) phonons is considered in the field of strong electromagnetic wave. The temperature of the structural phase transition due to TO-mode condensation with q = 0 is found to decrease in the field of the wave. Increase in the energy of direct optical interband dipole transition λ produces a change in the kind of the phase transition, so that a tricritical point appears in the phase diagram with variables (T, λ). The critical field intensity of the wave is found to be 106V/cm in the case of SnTe.
Databáze: OpenAIRE