The tricritical point of a ferroelectric semiconductor in the field of strong electromagnetic wave
Autor: | V. I. Litvinov, K. A. Valuyev, K. D. Tovstyuk |
---|---|
Rok vydání: | 1981 |
Předmět: | |
Zdroj: | Ferroelectrics. 34:161-164 |
ISSN: | 1563-5112 0015-0193 |
DOI: | 10.1080/00150198108238718 |
Popis: | Within a two-band model of narrow-gap semiconductor, the interaction between electrons and transverse optical (TO) phonons is considered in the field of strong electromagnetic wave. The temperature of the structural phase transition due to TO-mode condensation with q = 0 is found to decrease in the field of the wave. Increase in the energy of direct optical interband dipole transition λ produces a change in the kind of the phase transition, so that a tricritical point appears in the phase diagram with variables (T, λ). The critical field intensity of the wave is found to be 106V/cm in the case of SnTe. |
Databáze: | OpenAIRE |
Externí odkaz: |