Structural properties of subgrain boundaries in bulk SiC crystals

Autor:	Masakazu Katsuno, Tatsuo Fujimoto, Hirokatsu Yashiro, Noboru Ohtani, Takashi Aigo, Masatoshi Kanaya, Hiroshi Tsuge
Rok vydání:	2000
Předmět:	Diffraction Materials science Condensed matter physics Misorientation Condensed Matter Physics Rotation Isotropic etching Inorganic Chemistry Crystallography chemistry.chemical_compound chemistry Etching (microfabrication) Lattice plane Materials Chemistry Silicon carbide Grain boundary
Zdroj:	Journal of Crystal Growth. 216:256-262
ISSN:	0022-0248
Popis:	The structural properties of subgrain boundaries (low-angle grain boundaries) in bulk SiC crystals have been studied using high-resolution X-ray diffraction (HRXRD) and molten KOH defect selective etching. The defect-selective etching revealed that the subgrain boundaries were polygonized into 1 1 0 0 directions and most often occurred at the peripheral parts of crystals. The relative misorientation between adjacent subgrains was examined by HRXRD, and it was found that the tilting of the (0 0 0 1) lattice plane occurred at the subgrain boundaries and had a rotation axis parallel to both the boundary plane and the (0 0 0 1) basal plane. Based on these results, we have discussed the cause and mechanism of the formation of subgrain boundaries in bulk SiC crystals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::260deffec56e745b2ff474b8d5bb363b https://doi.org/10.1016/s0022-0248(00)00445-0 Zobrazit plný text záznamu Full Text from ScienceDirect