The application of the nanostructure aluminum in the blue organic light-emitting devices
| Autor: | Ya-Dong Liu, Yu-hua Mi, Song Xinchao, Guo Wangjun, Zhou Jihua, Haihao Zhang, Yan Zhao, Jie Zhang, Wu Zhisheng |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Nanostructure 02 engineering and technology Electroluminescence 010402 general chemistry 01 natural sciences law.invention Biomaterials law Materials Chemistry OLED Electrical and Electronic Engineering business.industry General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Optical microcavity Cathode 0104 chemical sciences Electronic Optical and Magnetic Materials Anode Full width at half maximum Optoelectronics 0210 nano-technology business Current density |
| Zdroj: | Organic Electronics. 57:1-6 |
| ISSN: | 1566-1199 |
| Popis: | A composition of aluminum (Al)/1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) was adopted on the ITO anode of organic light-emitting diodes (OLEDs). With changing the thickness of this anode nanostructure Al, a whole continuous nanofilm or discontinuous nanoparticles would be formed on the ITO surface which can be used to improve the performance of the blue-emitting device. An optical microcavity would be formed by the whole continuous Al nanofilm at the thickness of 15 nm combined with the cathode Al film, which could narrow the emission spectra and enhance the blue emission intensity from the 4,4′-bis(9-ethyl-3-carbazovinylene)-1,1′-biphenyl (BCzVBi). A deep blue electroluminescent (EL) emission with an EL efficiency of 5.7 cd/A at a current density of 20 mA/cm2 at saturated blue Commission International de l’Eclairage (CIE) coordinates of (0.137, 0.112) was obtained, of which the full width at half-maxmium (FWHM) of 49 nm was narrower 30% than the reference device with the increased EL intensity. And while the formed discontinuous nanoparticles was optimized at the thickness of 3 nm, the surface plasmon (SP) effect of the Al nanoparticles was utilized to increase the EL efficiency up to 7.5 cd/A which was 36% higher than the reference device at a current density of 20 mA/cm2, and along with the slightly changed CIE coordinates of (0.156, 0.210). |
| Databáze: | OpenAIRE |
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