Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition
| Autor: | James Kolodzey, John Hart, Stefan Zollner, Thomas N. Adam, Ryan Hickey, Ramsey Hazbun, Ayana Ghosh, Nalin Fernando |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silanes Silicon Hybrid physical-chemical vapor deposition Ultra-high vacuum technology industry and agriculture Analytical chemistry chemistry.chemical_element 02 engineering and technology Chemical vapor deposition equipment and supplies 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Inorganic Chemistry Secondary ion mass spectrometry chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry Deposition (phase transition) 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 444:21-27 |
| ISSN: | 0022-0248 |
| Popis: | The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures ( T =400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys. |
| Databáze: | OpenAIRE |
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