High-reflectivity AlxGa1−xN∕AlyGa1−yN distributed Bragg reflectors with peak wavelength around 350nm
| Autor: | A. Alyamani, Peter J. Parbrook, D. M. Whittaker, R. J. Lynch, Raphaël Butté, Daniele Sanvitto, Tao Wang, M. S. Skolnick |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry medicine.disease_cause Spectral line law.invention Wavelength Optics law Sapphire medicine Optoelectronics Metalorganic vapour phase epitaxy Absorption (electromagnetic radiation) business Ultraviolet Molecular beam epitaxy Light-emitting diode |
| Zdroj: | Applied Physics Letters. 85:43-45 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Al0.49Ga0.51N∕Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353nm with a stop-band width of 17nm was obtained at 300K using a 25pair DBR. Structures at 6nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from internal absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data. |
| Databáze: | OpenAIRE |
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