Crystallographic Orientation Identification in Multicrystalline Silicon Wafers Using NIR Transmission Intensity
Autor: | Kevin Skenes, Arkadeep Kumar, R.G.R. Prasath, Steven Danyluk |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Diffraction Materials science Solid-state physics Silicon business.industry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Monocrystalline silicon Crystallography Planar chemistry Residual stress Photovoltaics 0103 physical sciences Materials Chemistry Wafer Electrical and Electronic Engineering 0210 nano-technology business |
Zdroj: | Journal of Electronic Materials. 47:1030-1037 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/s11664-017-5982-y |
Popis: | Near-infrared (NIR) polariscopy is a technique used for the non-destructive evaluation of the in-plane stresses in photovoltaic silicon wafers. Accurate evaluation of these stresses requires correct identification of the stress-optic coefficient, a material property which relates photoelastic parameters to physical stresses. The material stress-optic coefficient of silicon varies with crystallographic orientation. This variation poses a unique problem when measuring stresses in multicrystalline silicon (mc-Si) wafers. This paper concludes that the crystallographic orientation of silicon can be estimated by measuring the transmission of NIR light through the material. The transmission of NIR light through monocrystalline wafers of known orientation were compared with the transmission of NIR light through various grains in mc-Si wafers. X-ray diffraction was then used to verify the relationship by obtaining the crystallographic orientations of these assorted mc-Si grains. Variation of transmission intensity for different crystallographic orientations is further explained by using planar atomic density. The relationship between transmission intensity and planar atomic density appears to be linear. |
Databáze: | OpenAIRE |
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