Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements
| Autor: | Béchir Yangui, F. Jomni, Patrice Gonon, O. Khaldi, C. Mannequin, Christophe Vallée |
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| Rok vydání: | 2014 |
| Předmět: |
010302 applied physics
Materials science Forming processes 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Plateau (mathematics) Thermal conduction 01 natural sciences Capacitance Resistive random-access memory Stress (mechanics) 0103 physical sciences Degradation (geology) General Materials Science Current (fluid) Composite material 0210 nano-technology |
| Zdroj: | physica status solidi (RRL) - Rapid Research Letters. 8:634-638 |
| ISSN: | 1862-6254 |
| DOI: | 10.1002/pssr.201409153 |
| Popis: | In this Letter, we evaluate the so-called forming process of virgin HfO2 cells under ac and dc stress by capacitance–voltage measurements. It is found that the ac nonlinearity is higher than the dc one. This is related to the dispersive nature of hopping conduction according to the electrode polarization model. Under short stress times, both capacitance and current are unaffected. However, after longer stress times, no recovery is observed. Consequently, the current increases and a plateau appears in the capacitance. The observed degradation is consistent with the RRAMs-forming process. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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