Gated field-emission cathodes for microwave devices

Autor: Y. Pang, H.P. Demroff, M.D. Stewart, W. Yu, S.M. Elliott, M.H. Wiechold, B. Lee, D.L. Parker, M. Popovic, W.K. Yue, Peter McIntyre, J.D. Legg
Rok vydání: 2002
Předmět:
Zdroj: Conference Record of the 1991 IEEE Particle Accelerator Conference.
DOI: 10.1109/pac.1991.164420
Popis: The Accelerator Research Laboratory at Texas A&M University is developing gated field-emitter cathodes for microwave and millimeter-wave applications. The cathode consists of an array of gated field-emitters which are modulated at microwave frequency to produce a fully modulated electron beam. Field-emitter structures under development include gated knife-edge arrays, reentrant cusps, and porous silicon. All feature extremely high transconductance, low noise, and rugged structure as compared to earlier field-emitter structures. The field emission at the cathode surface is discussed. The knife-edge emitter geometry is described. The inverted cusp cathodes are considered. The porous silicon emitting surfaces are described. >
Databáze: OpenAIRE