| Autor: |
M. Gordon, S. St Onge, Edward J. Gordon, Hanyi Ding, Alvin J. Joseph, Matthew D. Moon, Mete Erturk, J. Dunn, A.K. Stamper, Z.X. He, Ebenezer E. Eshun, Douglas M. Daley, Douglas D. Coolbaugh |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. |
| Popis: |
High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MIM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/mum 2 was achieved for a six level copper wiring BEOL. Impact of copper plane was characterized to ensure optimal manufacturing production |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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