Plasma-enhanced chemical vapor deposition of 99.95% 28Si in form of nano- and polycrystals using silicon tetrafluoride precursor
| Autor: | M. N. Drozdov, L. V. Gavrilenko, Yu. N. Drozdov, D. A. Pryakhin, Boris A. Andreev, Petr G. Sennikov, Hans-Joachim Pohl, V. I. Shashkin |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon Inorganic chemistry chemistry.chemical_element General Chemistry Substrate (electronics) engineering.material Isotope dilution Condensed Matter Physics chemistry.chemical_compound Polycrystalline silicon chemistry Chemical engineering Plasma-enhanced chemical vapor deposition Tetrafluoride engineering Silicon tetrafluoride General Materials Science Layer (electronics) |
| Zdroj: | Crystal Research and Technology. 45:983-987 |
| ISSN: | 0232-1300 |
| DOI: | 10.1002/crat.201000088 |
| Popis: | The process of plasma chemical deposition of silicon was investigated from its tetrafluoride containing 99.99% of 28Si isotope in the form of thin layer of nano-crystalline silicon on silicon substrate and of thick layer of polycrystalline silicon on the inner surface of quartz reactor. The layers are characterized by the methods of X-ray diffraction and Raman spectroscopy. Using the SIMS method the mechanism of isotopic dilution was investigated in the PECVD process (the content of 28Si isotope in layers was 99.95-99.98%). A necessity is indicated in thorough special preparation of the reactor for minimization of isotopic dilution in case of fabrication of silicon containing ≥99.9% of 28Si. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text