Investigation of silicon stress around through silicon vias by high efficiency micro-Raman microscopy

Autor:	Dai Fengwei, He Hongwen, Su Meiying, Jing Xiangmeng, Yu Daquan
Rok vydání:	2013
Předmět:	Materials science Silicon Hybrid silicon laser business.industry chemistry.chemical_element Integrated circuit Stress testing (software) law.invention Stress (mechanics) Reliability (semiconductor) chemistry law Nondestructive testing Microscopy Electronic engineering Optoelectronics business
Zdroj:	2013 14th International Conference on Electronic Packaging Technology.
DOI:	10.1109/icept.2013.6756425
Popis:	Through silicon vias (TSVs) attract considerable amount of attention and activity in recent years as a main means to achieve three-dimensional (3D) integrated circuit (IC) functionality. However, the new technology poses new integration challenges as well as new reliability challenges. This paper presents the latest progress in TSV non-destructive stress testing by means of micro-Raman microscopy, a technique which is approved to be the method of choice for identifying stress on silicon surface. The principle of micro-Raman microscopy for TSV measurement is illustrated. By using commercially available micro-Raman microscopy tools, silicon stress around vias having a diameter of 30 μm and a depth of 160 μm has been visualized under optimized conditions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::25dd0b3fd00761a1c69668db3bb0d32d https://doi.org/10.1109/icept.2013.6756425 Zobrazit plný text záznamu