An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM

Autor:	Jun Hyun Chun, Sang-Jin Byeon, Han Ho Jin, Jin-Hee Cho, Kang Seol Lee, Jae-Jin Lee, Kwan-Weon Kim, Sung-Joo Hong, Kyung Whan Kim, Dong Uk Lee, Sang Kyun Nam
Rok vydání:	2014
Předmět:	Engineering Correlated double sampling Reliability (semiconductor) business.industry Process (computing) Electrical engineering Electronic engineering High Bandwidth Memory Ohm business Impedance distribution Dram Testability
Zdroj:	VLSIC
DOI:	10.1109/vlsic.2014.6858368
Popis:	For the heterogeneous-structured high bandwidth memory (HBM) DRAM, it is important to guarantee the reliability of TSV connections. An exact TSV current scan and repair method is proposed, that uses similar to the correlated double sampling method. The register-based pre-repair method improves testability. The measurement results for thousands of TSV shows impedance distribution under 0.1 ohm. Methods are integrated in 8Gb HBM stacked DRAM using 29nm process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::25da9d3125b3cf800317659df0c5b5af https://doi.org/10.1109/vlsic.2014.6858368 Zobrazit plný text záznamu