The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET
| Autor: | Xiaoyan Tang, Qing Wen Song, Yuming Zhang, Yan Jing He, Zhi Qiang Bai, Yi Men Zhang, Yi Fan Jia, Chao Han |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Stability (probability) Threshold voltage Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 954:144-150 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.954.144 |
| Popis: | Even with SiC power MOSFETs released into the commercial market, the threshold voltage instability caused by near interface states is still an attracting issue, which is a major obstacle to further improving the device performance. In this paper, the effects of temperature storage on the threshold voltage stability of n-channel 4H-SiC VDMOSFET are studied. It is found that the capture of hole traps is dominant during the long-term temperature storage at 425 K, causing a considerable negative shift of threshold voltage. In view of the influence of temperature storage, the positive and negative drift trends of threshold voltage slow down during the gate-bias stress measurement. And the ∆VTH, the difference between the threshold voltages recorded after positive and negative gate-bias stress in the same duration, also grows slowly with the increasing stress duration. Finally, some suggestions for improving the threshold reliability of n-channel SiC VDMOSFETs are presented. |
| Databáze: | OpenAIRE |
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