Effect of the charge distribution at the interface on the properties of PZT/SiO2/Si heterostructure
| Autor: | Bai-ru Zhao, Weizhi Gong, Chun Cai, Zhao Hao, Yuan Lin, Bo Xu |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry media_common.quotation_subject Charge density Conduction type Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Asymmetry Electronic Optical and Magnetic Materials Capacitance voltage Si substrate Optoelectronics business Polarization (electrochemistry) Quantum tunnelling media_common |
| Zdroj: | Ferroelectrics. 252:321-328 |
| ISSN: | 1563-5112 0015-0193 |
| DOI: | 10.1080/00150190108016272 |
| Popis: | Asymmetry related to the conduction type of the Si substrate and polarization direction of PZT were found in the polarization-voltage (P-V) loops, capacitance voltage (C-V) curves and resistance of the integrated system. According to the configuration and the characteristic of the integrated structure, we suggest that the space-charge layer in Si and the tunneling process between Si and PZT during the polarization are the main causes for this asymmetry. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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