Optimization of picosecond laser structuring for the monolithic serial interconnection of CIS solar cells
| Autor: | Joerg Palm, Gerhard Heise, Andreas Heiss, Helmut Vogt, Thomas Kuznicki, Heinz P. Huber, Christian Hellwig |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Interconnection
Laser ablation Materials science Renewable Energy Sustainability and the Environment business.industry medicine.medical_treatment Condensed Matter Physics Ablation Laser Electronic Optical and Magnetic Materials law.invention Wavelength Optics law medicine Electrical and Electronic Engineering business Layer (electronics) Order of magnitude Beam (structure) |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 21:681-692 |
| ISSN: | 1062-7995 |
| DOI: | 10.1002/pip.1261 |
| Popis: | We report on the optimization of selective picosecond laser structuring for the monolithic serial interconnection of (Cu(In,Ga)(S,Se)2) CIS thin film solar cells. We introduce a quantitative value to compare the energy efficiency of the different investigated laser processes, the specific ablation energy, which indicates the required energy to remove a certain volume of the specific material. We have examined the structuring efficiencies for induced laser ablation processes for a modification of the beam profile (elliptical and flat-top beam shaping) and for the application of different laser wavelengths (1064 and 532 nm). Application of induced laser processes (often referred as “lift-off”) decreases the specific ablation energy dramatically by nearly one order of magnitude. Modifications of the beam profile such as elliptical and flat-top beam shaping are nearly halving the energy per ablated volume relative to a circular beam. The application of a laser wavelength 532 nm decreases the specific ablation energy compared with 1064 nm significantly for processes involving the CIS layer. We finally demonstrate that with a picosecond laser power of only 2 W, the molybdenum back contact (P1, glass side) and the ZnO front contact (P3, ZnO on CIS) can be structured with a process speed of up to 4 m/s. About 2 µm thick CIS layer (P2) is structured by standard direct laser ablation at higher energy densities with 200 mm/s. Copyright © 2012 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text