Surface carbonization of Si(111) by C2H2 and the subsequent SiC(111) epitaxial growth from SiH4 and C2H2

Autor:	Ming Shien Hu, Lu-Sheng Hong
Rok vydání:	2004
Předmět:	Materials science Carbonization Photoemission spectroscopy Nucleation Partial pressure Surface finish Condensed Matter Physics Epitaxy Inorganic Chemistry Crystallography Chemical engineering Torr Materials Chemistry Surface roughness
Zdroj:	Journal of Crystal Growth. 265:382-389
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.02.022
Popis:	Surface carbonization of Si(1 1 1) using C 2 H 2 as the carbon source was performed at 1343 K and 5 Torr in a thermal chemical vapor deposition reactor. The evolution of the carbonization process as a function of the C 2 H 2 treatment time was investigated using atomic force microscopy and X-ray photoemission spectroscopy analytical techniques. It was found that at a C 2 H 2 partial pressure of 5.0×10 −2 Torr, the initial SiC nucleation proceeds to increase the surface roughness up to 0.2 nm after 5 min carbonization. When the carbonization is performed up to 8 min, the SiC nuclei saturate, reducing the surface roughness back to its original value at a saturation SiC thickness of about 1.4 nm.Subsequent SiC(1 1 1) epitaxial growth on the 8 min-carbonization surface was found to have a smooth surface morphology and void-free interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::25caae9bc850f4b0ba38a90eb6381669 https://doi.org/10.1016/j.jcrysgro.2004.02.022 Zobrazit plný text záznamu Full Text from ScienceDirect