GaN on Silicon Substrate With Various SiC Buffer Layer for UV Detecting Applications
| Autor: | Yen-Ting Chiang, Tse-Heng Chou, Kai-Chun Hsu, Feng-Renn Juang, Yean-Kuen Fang, Cheng-I Lin, Tzu-Chieh Wei, Chi-Ying Liang, Chii-Wen Chen |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Wide-bandgap semiconductor Analytical chemistry chemistry.chemical_element Gallium nitride Substrate (electronics) chemistry.chemical_compound Responsivity chemistry Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film business Instrumentation Layer (electronics) |
| Zdroj: | IEEE Sensors Journal. 10:1291-1296 |
| ISSN: | 1530-437X |
| DOI: | 10.1109/jsen.2009.2037310 |
| Popis: | Metal organic chemical vapor deposited Gallium nitride (GaN) thin films on (111) n-Si substrate with polycrystalline β-SiC (poly-SiC), cubic β-SiC (c-SiC), and porous β-SiC (PSC) buffer layers were characterized in detail using X-ray diffraction, Fourier transform IR spectroscopy, atomic force microscope, TEM, SEM, and Raman spectrometer. The β-SiC thin film was prepared by rapid thermal chemical vapor deposition, while the PSC thin film was formed by using the electrochemical anodization on a cubic β-SiC thin film. In addition, we used the GaN thin film on different buffer layers to construct a metal-semiconductor-metal (MSM) photodiode and measured its photo/dark current ratio (PDCR) and responsivity with and without the irradiance of an UV light source for examining the ultraviolet detecting properties. Among these MSM photodiodes, the structure of GaN/PSC/n-Si achieved the highest PDCR and responsivity of 6.75 × 105 and 138 mA/W, respectively, for the lowest stress built in the GaN film. |
| Databáze: | OpenAIRE |
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