| Autor: |
C. Sanjeevi Raja, K. Ramachandran, Sankar Narasimhan |
| Rok vydání: |
2001 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.446577 |
| Popis: |
ZnSe and phosphorus doped ZnSe have been grown by Physical Vapour Transport (PVT) and Chemical Vapour Transport (CVT). In chemical vapour transport iodine is used as the transport agent where as in the physical vapour transport no transport agent is used. The largest crystal measures a size of 9 x 5 x 5 mm3. The Hall mobility is measured at room temperature and found to be 510 (cm2 / V.Sec) for pure ZnSe and 340 (cm2 / V.Sec) for doped ZnSe. The variance of mobility with temperature is also measured. The results are compared with the existing data and the advantages of this procedure over the existing experiments are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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