| Autor: |
M. D. Gibbons, J.M. Swab, D.M. Brown, W. E. Davern, Ching-Yeu Wei, E.A. Taft, K.L. Wang |
| Rok vydání: |
1980 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices. 27:170-175 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/t-ed.1980.19836 |
| Popis: |
InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010cm-2. eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity ( R ). The average D*of a 64- element line array was measured to be 3.4 × 1011cm. Hz1/2. W-1which is 70 percent of that of "background-limited-performance" (BLIP) operation. The R was 1 × 10-5V/photon with 10-percent uniformity. The D*and R were also obtained for a 32 × 32 2D array. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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