Simple simulation approach for the first trigger step of SEB (single event burn-out) based upon physical analysis for Si high voltage bipolar device
| Autor: | Suzuki Kenji, K. Uryu, H. Muraoka, Tadaharu Minato, K. Takakura, Yasuhiro Yoshiura, M. Tabata, N. Taniguchi, Shinji Aono, Masayoshi Tarutani |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Physics business.industry 020208 electrical & electronic engineering High voltage 02 engineering and technology Radiation 01 natural sciences Power (physics) Acceleration Impact ionization Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics business p–n junction Energy (signal processing) |
| Zdroj: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2016.7520841 |
| Popis: | Through the physical analysis, the first and minimum destruction point of the power semiconductor chip is precisely identified as around the main pn junction. It well agrees with the Impact Ionization (I/I) peak enhanced by an electric field crowding. A simple device simulation approach, which uses a visible light approximation (optical generation) instead of a high energy radiation ion, is effective to trace the SEB phenomenon. Several fundamental settings were studied to simulate the experimental results. |
| Databáze: | OpenAIRE |
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