Basic Mechanisms of Al Interaction with the ZnO Surface
| Autor: | Charith E. Nanayakkara, Jiyoung Kim, Antonio T. Lucero, Eric C. Mattson, Lorena Marín, Jean François Veyan, Yves J. Chabal, Carole Rossi, Yuzhi Gao, Jérémy Cure, Alain Estève |
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| Rok vydání: | 2017 |
| Předmět: |
Mass transport
In situ infrared spectroscopy Materials science Photoemission spectroscopy Analytical chemistry 02 engineering and technology Penetration (firestop) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Catalysis General Energy Low-energy ion scattering Desorption Physical and Theoretical Chemistry 0210 nano-technology Chemical composition |
| Zdroj: | The Journal of Physical Chemistry C. 121:12780-12788 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.7b02661 |
| Popis: | Deposition of Al on ZnO is used for a number of electronic and catalytic devices as well as for nanoenergetic materials. The interface structure and chemical composition often control the performance of devices. In this study, in situ infrared spectroscopy, X-ray photoemission spectroscopy, and low energy ion scattering are combined to investigate the initial stage of interface formation between Al and ZnO. We find that (a) the interface is highly inhomogeneous with discontinuous Al patches, leaving ∼10% of the ZnO surface uncovered even after deposition of an equivalent of 11 nm-thick Al film; (b) upon Al deposition, Al reduces ZnO by forming Al2O3 and releasing Zn to the surface, and this process continues as more Al is deposited; (c) the reduced surface Zn atoms readily desorb at 150 °C; and (d) at higher temperature (>600 °C) all Al is oxidized as a result of mass transport. Deposition of a thin Al2O3 layer on ZnO prior to Al deposition effectively prevents Al penetration and Zn release, requiring hig... |
| Databáze: | OpenAIRE |
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