| Autor: |
Jonathan Richard Strange, S. Nandipaku, S. Atkinson, J. Harrebek, Tony Montalvo, Brad P. Jeffries, A. Hill, Michael R. Elliott, Frank Murden |
| Rok vydání: |
2004 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of Solid-State Circuits. 39:2190-2199 |
| ISSN: |
0018-9200 |
| DOI: |
10.1109/jssc.2004.836340 |
| Popis: |
This 0.5-/spl mu/m SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. Envelope information is extracted from the transmit IF and applied to the phase-modulated carrier in an RF variable gain amplifier which follows the integrated transmit VCO. The dual-band IC supports all four GSM bands. In EDGE mode, the IC produces more than 1 dBm of output power with more than 6 dB of margin to the transmit spectrum mask and less than 3% rms phase error. In GSM mode, more than 7 dBm of output power is produced with noise in the receive band less than -164 dBc/Hz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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