Surface analysis of reactive ion‐etched InP
| Autor: | R. van Roijen, C. W. T. Bulle‐Lieuwma, L.J. van IJzendoorn, T. L. G. Thijssen, M. B. M. Kemp |
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| Rok vydání: | 1991 |
| Předmět: |
Photoluminescence
Chemistry fungi technology industry and agriculture Analytical chemistry General Physics and Astronomy macromolecular substances Rutherford backscattering spectrometry Characterization (materials science) Ion stomatognathic system X-ray photoelectron spectroscopy Etching (microfabrication) Transmission electron microscopy Reactive-ion etching |
| Zdroj: | Journal of Applied Physics. 70:3983-3985 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.349165 |
| Popis: | A dry‐etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x‐ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed. |
| Databáze: | OpenAIRE |
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