Effective surface passivation of In0.53Ga0.47As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study
| Autor: | T.W. Pi, W.C. Lee, H.W. Wan, P. Chang, Yu-Hsu Chang, J. Kwo, T.D. Lin, Minghwei Hong |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Passivation Analytical chemistry 02 engineering and technology Conductance method Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Inorganic Chemistry Capacitor law 0103 physical sciences Thermal Materials Chemistry Effective surface 0210 nano-technology Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 477:159-163 |
| ISSN: | 0022-0248 |
| Popis: | Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-κ HfO 2 dielectrics have been in - situ deposited on MBE-grown pristine p - and n -In 0.53 Ga 0.47 As(0 0 1). The HfO 2 /In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage ( C - V ) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities ( D it ’s) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO 2 /InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800 °C. |
| Databáze: | OpenAIRE |
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