Field-enhanced design of steep-slope VO2 switches for low actuation voltage
| Autor: | Michele Tamagnone, Emanuele A. Casu, L. Petit, Clara F. Moldovan, Wolfgang A. Vitale, Mohamed Chaker, Adrian M. Ionescu, Nicolas Émond, Juan R. Mosig, Boris Le Drogoff |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Field (physics) business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Optical switch Subthreshold slope Reliability (semiconductor) Beyond CMOS Electric field 0103 physical sciences Electronic engineering Optoelectronics Metal–insulator transition 0210 nano-technology business Voltage |
| Zdroj: | ESSDERC |
| Popis: | The abrupt metal-insulator transition in vanadium dioxide (VO 2 ) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO 2 switches that allows decreasing their actuation voltage without affecting their performance and reliability. Exploiting this design, we characterized VO 2 switches with extremely abrupt transitions (< 1 mV/dec) until 60 °C and a reduction in actuation voltage up to 38.3% with respect to conventional devices. |
| Databáze: | OpenAIRE |
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