Low power switching of Si-doped Ta2O5 resistive random access memory for high density memory application
| Autor: | Kee Jeung Lee, Hyeong Soo Kim, Soo Gil Kim, Beom-Yong Kim, Su Ock Chung, Young Seok Ko |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry General Engineering General Physics and Astronomy Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Resistive random-access memory law.invention Atomic layer deposition Stack (abstract data type) law 0103 physical sciences Optoelectronics Node (circuits) Resistor Current (fluid) 0210 nano-technology business Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 55:04EE09 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | We report, for the first time, the resistive switching properties of Si-doped Ta2O5 grown by atomic layer deposition (ALD). The reduced switching current, improved on/off current ratio, and excellent endurance property are demonstrated in the Si-doped Ta2O5 resistive random access memory (ReRAM) devices of 50 nm tech node. The switching mechanism for the Si-doped Ta2O5 resistor is discussed. Si dopants enable switching layer to have conformal distribution of oxygen vacancy and easily form conductive filament. This leads to higher on/off current ratio at even low operation current of 5–10 µA. Finally, one selector–one resistor (1S1R) ReRAM was developed for large cell array application. For the optimized 1S1R stack, 0.2 µA of off current and 5.0 of on/off current ratio were successfully achieved at 10 µA of low operation current. |
| Databáze: | OpenAIRE |
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