Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)
| Autor: | Chun Woong Park, Il Hwan Cho, Woo Young Choi, Cherlhyun Jeong, Chong-Dae Park, Dongsun Seo |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Engineering
business.industry Transistor Phase (waves) Phase-change material Finite element method Electronic Optical and Magnetic Materials law.invention Phase-change memory Set (abstract data type) law Electronic engineering Process optimization Electrical and Electronic Engineering business Scaling Simulation |
| Zdroj: | JSTS:Journal of Semiconductor Technology and Science. 14:48-52 |
| ISSN: | 1598-1657 |
| DOI: | 10.5573/jsts.2014.14.1.048 |
| Popis: | In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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