Epitaxial CoSi2 Formation on (001) Si Using Sequentially Deposited Ti-Co Bilayers

Autor:	S. L. Hsia, P. L. Smith, T. Y. Tan, G. E. McGuire
Rok vydání:	1993
Předmět:	Materials science Scale (ratio) business.industry Epitaxy Metal Electrical resistivity and conductivity Single crystal film visual_art visual_art.visual_art_medium Optoelectronics Thermal stability Rapid thermal annealing business Interfacial morphology
Zdroj:	Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices ISBN: 9789401047579
DOI:	10.1007/978-94-011-1727-2_27
Popis:	Using sequentially deposited Ti-Co metal bilayers on Si, for which Ti was deposited first, we have obtained epitaxial CoSi2 single crystal films on (001) Si substrates after rapid thermal annealing (RTA). The CoSi2 film resistivity, thermal stability, CoSi2-Si interfacial morphology, and processing conditions meet the requirements of electronic device fabrications in the ultra-large scale integration (ULSI) regime.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2576c0deac5033859ecd0388493b28b0 https://doi.org/10.1007/978-94-011-1727-2_27 Zobrazit plný text záznamu