| Autor: |
K.S.K. Kwa, L.S. Driscoll, Anthony O'Neill, Jing Zhang, Sarah H. Olsen, Sanatan Chattopadhyay, A.M. Waite, Y.T. Tang, A.G.R. Evans |
| Rok vydání: |
2004 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices. 51:1156-1163 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/ted.2004.830656 |
| Popis: |
On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si/sub 0.75/Ge/sub 0.25/. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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