| Autor: |
Limin Zhang, C.H. Zhang, P. Hu, Jiangtao Zhao, R. C. Fadanelli, Tianhe Wang |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :53-56 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/j.nimb.2015.04.065 |
| Popis: |
In0.18Ga0.82N films were irradiated with 4 MeV Kr-84 and 8.9 MeV Bi-209 ions to various fluences at room temperature. The irradiated films were analyzed by means of Rutherford backscattering/channeling (RBS/C) and high resolution X-ray diffraction (HRXRD). The RBS/C measurements show that under the irradiation conditions, the relative lattice disorder in the films, obtained from the normalized backscattering yield, exhibits a rapid increase in the range from similar to 2% to 68%. There is also an increasing lattice expansion of the films with increasing ion fluence, as determined by the HRXRD measurements. At a comparable level of lattice disorder, the Kr irradiation leads to a more pronounced lattice expansion than the Bi irradiation. This may be attributed to a larger portion of the single interstitials in the films produced by the lighter Kr ion irradiation. (C) 2015 Elsevier B.V. All rights reserved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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