| Popis: |
The formation of buried silicon dioxide or nitride layers by high-dose implantation (typically 10 18 ions cm 2 ) of energetic ions at elevated target temperatures is being extensively studied to produce silicon-on-insulator structures for device applications. The present paper reviews the different approaches to model these processes. The phenomenological models reported so far describe the modification of ion range profiles by target swelling, changing target composition, surface sputtering, and diffusion of unbonded implanted species. Reasonable oxygen or nitrogen depth profiles can be computed, but the electrically active microstructures in the synthesized layer systems are still beyond the scope of these simulations. |
