| Autor: |
Ling-Ling Wu, Guang-Wei Wang, Juan Tian, Dong-Ming Wang, De-Liang Wang |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Chinese Physics B. 31:108803 |
| ISSN: |
1674-1056 |
| DOI: |
10.1088/1674-1056/ac728e |
| Popis: |
Recently, the efficiency of CdTe thin film solar cell has been improved by using new type of window layer Mg x Zn1−x O (MZO). However, it is hard to achieve such a high efficiency as expected. In this report a comparative study is carried out between the MZO/CdTe and CdS/CdTe solar cells to investigate the factors affecting the device performance of MZO/CdTe solar cells. The efficiency loss quantified by voltage-dependent photocurrent collection efficiency (η C(V′)) is 3.89% for MZO/CdTe and 1.53% for CdS/CdTe solar cells. The higher efficiency loss for the MZO/CdTe solar cell is induced by more severe carrier recombination at the MZO/CdTe p–n junction interface and in CdTe bulk region than that for the CdS/CdTe solar cell. Activation energy (E a) of the reverse saturation current of the MZO/CdTe and CdS/CdTe solar cells are found to be 1.08 eV and 1.36 eV, respectively. These values indicate that for the CdS/CdTe solar cell the carrier recombination is dominated by bulk Shockley–Read–Hall (SRH) recombination and for the MZO/CdTe solar cell the carrier recombination is dominated by the p–n junction interface recombination. It is found that the tunneling-enhanced interface recombination is also involved in carrier recombination in the MZO/CdTe solar cell. This work demonstrates the poor device performance of the MZO/CdTe solar cell is induced by more severe interface and bulk recombination than that of the CdS/CdTe solar cell. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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