Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition
| Autor: | Shou Yang Zhang, Guo Dong Sun, Qiangang Fu, Wei Cao, Hejun Li, Yan Qiong Jiao |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Hybrid physical-chemical vapor deposition Mechanical Engineering Chemical vapor deposition engineering.material Combustion chemical vapor deposition Condensed Matter Physics Electron beam physical vapor deposition Coating Surface-area-to-volume ratio Mechanics of Materials Plasma-enhanced chemical vapor deposition Environmental chemistry engineering Deposition (phase transition) General Materials Science Composite material |
| Zdroj: | Materials Science Forum. :635-640 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.610-613.635 |
| Popis: | A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained. |
| Databáze: | OpenAIRE |
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