Ag contact on sol–gel processed MgZnO film
| Autor: | Tsung-Lin Kuo, Meng-Hua Tsai, Chia-Tsung Horng, Wen-Chang Huang, Tien-Chai Lin, Tsung-Lieh Hsien |
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| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Materials science Equivalent series resistance Band gap business.industry Schottky diode Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics Crystallite Electrical and Electronic Engineering Thin film business Sol-gel Diode |
| Zdroj: | Microelectronic Engineering. 107:205-209 |
| ISSN: | 0167-9317 |
| Popis: | The contact characteristics of Ag on a sol-gel processed MgZnO thin film is presented in the paper. Both of the material properties of the sol-gel ZnO films and the electrical characteristics of the Schottky diode are addressed in the paper. The structure of the MgZnO film is confirmed by X-ray diffraction analysis and the MgZnO film exhibits a hexagonal wurtzite-type polycrystalline. The optical bandgap of the film is determined by using transmittance spectra and is found to be 3.42eV. The Ag/MgZnO diode shows a barrier height of 0.78eV with an ideality factor value of 1.21 and a reverse current of 3.39x10^-^4A/cm^2 at -3V. The Cheung's function is also used to determine the parameters of the diode. The series resistance with a value of 1.38x10^[email protected] is evaluated. |
| Databáze: | OpenAIRE |
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