Mechanism of snapback failure induced by the latch-up test in high-voltage CMOS integrated circuits

Autor:	Ming-Dou Ker, Chung-Ti Hsu, Po-An Chen, Jen-Chou Tseng, Fu-Yi Tsai, Yu-Lin Chen
Rok vydání:	2008
Předmět:	Materials science business.industry Electrical engineering Thyristor High voltage Integrated circuit Noise (electronics) law.invention Mechanism (engineering) CMOS Snapback law Electronic engineering business Electronic circuit
Zdroj:	2008 IEEE International Reliability Physics Symposium.
DOI:	10.1109/relphy.2008.4558958
Popis:	An electrical overstress failure induced by a latch-up test is studied in high-voltage integrated cricuits. The latchup test resulted in damage to the output NMOSFET due to snapbach and also resulted in a latch-up in the internal circuits. These mechanisms are analyzed and solutions are proposed to avoid the triggering of the output NMOSFET and the resulting latchup issue.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2558d9bb7e6831d6b2150cb9c556c667 https://doi.org/10.1109/relphy.2008.4558958 Zobrazit plný text záznamu