The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency

Autor:	L. Ya. Karachinsky, A. Yu. Egorov, V. N. Nevedomskii, A. V. Babichev, D. V. Denisov, Innokenty I. Novikov, E. S. Kolodeznyi, A. G. Gladyshev, Vladislav E. Bougrov, S. S. Rochas, V. V. Andryushkin
Rok vydání:	2020
Předmět:	010302 applied physics Photoluminescence Materials science Physics and Astronomy (miscellaneous) business.industry Superlattice Physics::Optics Heterojunction 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Vertical-cavity surface-emitting laser Condensed Matter::Materials Science 0103 physical sciences Optoelectronics 0210 nano-technology business Lasing threshold Quantum well Molecular beam epitaxy
Zdroj:	Technical Physics Letters. 46:1128-1131
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785020110267
Popis:	We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm spectral range. The heterostructures were characterized by measuring photoluminescence (PL) emission and X-ray diffraction. It is established that variation of the ratio of quantum-well and barrier-layer thicknesses in the SL allows controlled shift of the PL peak position for lasing in the 1.3-μm range at almost constant PL efficiency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2555f5f87bd7335314e5aec26860d30e https://doi.org/10.1134/s1063785020110267 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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