'Electrical microscopy' of test parameter inhomogeneities resulting from microdefects in processed silicon wafers
| Autor: | C.J. Varker |
|---|---|
| Rok vydání: | 1980 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Electronic Optical and Magnetic Materials law.invention Optical microscope chemistry Etching (microfabrication) Impurity law Electrical resistivity and conductivity Microscopy Optoelectronics Wafer Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 27:2205-2212 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/t-ed.1980.20253 |
| Popis: | Experimental results are presented on reverse current (I R ) inhomogeneities in n+-p diode arrays fabricated on wafers selected from dislocation-free Czochralski-grown silicon crystals. The crystals are boron doped with a resistivity of 10 Ω.cm and a |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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