Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes
| Autor: | Pao Sheng Lin, Jung Hui Tsai, Wen-Chau Liu, Syuan Hao Liou, Yu-Chi Chen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Current crowding chemistry.chemical_element 02 engineering and technology Zinc 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Luminous flux chemistry law 0103 physical sciences Optoelectronics General Materials Science Quantum efficiency Electrical and Electronic Engineering 0210 nano-technology business Layer (electronics) Diode Voltage Light-emitting diode |
| Zdroj: | Superlattices and Microstructures. 110:171-179 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2017.08.047 |
| Popis: | The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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