Effect of Bias Applied to the Substrate on the Low Temperature Growth of Silicon Epitaxial Films during RF-PECVD
| Autor: | Jae-soo Jung, Kun-Su Kim, Nong-Moon Hwang, Soon-won Park, Kwang Ho Kim |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element 02 engineering and technology General Chemistry Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences chemistry Plasma-enhanced chemical vapor deposition 0103 physical sciences Deposition (phase transition) Optoelectronics General Materials Science Wafer 0210 nano-technology business DC bias |
| Zdroj: | Crystal Growth & Design. 18:5816-5823 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.8b00384 |
| Popis: | The deposition behavior of silicon films by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) was studied by nonclassical crystallization, where the building block of deposition is charged nanoparticles generated in the gas phase of the reactor. To confirm the existence of nanoparticles in the RF-CVD reactor, nanoparticles were captured on the membrane of the transmission electron microscope (TEM) grid under the condition of the DC bias applied to the holder. The capturing behavior of nanoparticles depended on the bias and the conductivity of the membrane. Also, to examine the effect of the bias on the epitaxial growth, films were deposited on the silicon wafer substrate under the condition of the biases of 0, +1000, and −1000 V applied to the substrate holder. A fully epitaxial film could be grown on a silicon wafer at 550 °C under the bias of −1000 V. |
| Databáze: | OpenAIRE |
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