AFM-based fabrication of free-standing Si nanostructures
| Autor: | P. M. Campbell, P. J. McMarr, E. S. Snow |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Cantilever
Fabrication Nanostructure Materials science Atomic force microscopy Mechanical Engineering technology industry and agriculture Oxide Bioengineering Nanotechnology macromolecular substances General Chemistry Buried oxide chemistry.chemical_compound chemistry Mechanics of Materials Electric field General Materials Science Electrical and Electronic Engineering Layer (electronics) |
| Zdroj: | Nanotechnology. 7:434-437 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/0957-4484/7/4/024 |
| Popis: | AFM-generated surface modifications are used to fabricate free-standing Si nanostructures. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resulting oxide, thick, is used as a mask for deep selective etches of the unoxidized regions of Si. The etched structures reside on a buried oxide layer which is removed to produce free-standing Si wires and cantilevers. Due to the uniformity of the exposure and self-limiting etch processes, these structures are extremely uniform, which is a critical feature for nanometer-scale device applications. |
| Databáze: | OpenAIRE |
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