Optimization of SIMS analyses performed in the MCsx+ mode by using an in situ deposition of Cs
| Autor: | T. Wirtz, H.-N. Migeon |
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| Rok vydání: | 2004 |
| Předmět: |
Silicon
Analytical technique Analytical chemistry General Physics and Astronomy chemistry.chemical_element Context (language use) Surfaces and Interfaces General Chemistry Condensed Matter Physics Mass spectrometry Surfaces Coatings and Films Nickel chemistry Sputtering Caesium Deposition (phase transition) |
| Zdroj: | Applied Surface Science. :743-748 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2004.03.044 |
| Popis: | In order to optimize the advantageous quantification technique consisting in analyzing MCs x + clusters, we used the new Cs 0 column installed on the Cation Mass Spectrometer (CMS) and introduced an analysis technique consisting of an ion bombardment accompanied by a simultaneous deposition of Cs 0 at the surface of the sample. This experimental technique permits a successful decoupling of the sputtering and Cs introduction processes by avoiding the constraints imposed by an energetic Cs + ion bombardment. In order to investigate numerous aspects of the mentioned analytical technique, analyses were performed on three different samples (Al, Si, Ni) using a Ga + ion bombardment. In this paper, we will present an overview of the obtained results. We will deal in particular with the Cs concentrations reached during the analyses and the behavior of the measured MCs x + signals. We show in this context that the values of the Cs concentration and of the useful yields only depend on the ratio between the erosion and deposition rates, but not on the individual values of these two rates. |
| Databáze: | OpenAIRE |
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