Modeling of creation silicon ion clusters in a silane plasma
| Autor: | A. G. Galkevich, P. G. Makshov, A. F. Stekolnikov, D. V. Feschenko |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon Kinetics technology industry and agriculture General Physics and Astronomy chemistry.chemical_element Plasma Decomposition Silane chemistry.chemical_compound Chemical engineering chemistry Physics::Plasma Physics Plasma-enhanced chemical vapor deposition Cluster (physics) Ion clusters |
| Zdroj: | Czechoslovak Journal of Physics. 54:C636-C638 |
| ISSN: | 1572-9486 0011-4626 |
| DOI: | 10.1007/bf03166463 |
| Popis: | New gas-phase model of silane decomposition during plasma enhanced chemical vapor deposition with formation of stable negative hydrogenated silicon ion clusters is suggested. The kinetics equations describing time dependent cluster formation are computed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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