Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits
| Autor: | Sergio Periera, Ian Watson, Arup Neogi, Meg Mahat, Antonio Llopis, Richard D. Schaller |
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| Rok vydání: | 2012 |
| Předmět: |
Condensed Matter::Quantum Gases
Quenching Materials science Absorption spectroscopy Condensed matter physics Condensed Matter::Other Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Condensed Matter::Materials Science symbols.namesake Stark effect symbols General Materials Science Dislocation Spectroscopy Absorption (electromagnetic radiation) Quantum well |
| Zdroj: | MRS Communications. 2:55-60 |
| ISSN: | 2159-6867 2159-6859 |
| Popis: | Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching. |
| Databáze: | OpenAIRE |
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