The Effect of D-Defect in Silicon Single Crystal on Oxygen Precipitation

Autor:	Hirotoshi Yamagishi, I. Fusegawa, Nobuyoshi Fujimaki
Rok vydání:	1992
Předmět:	Materials science Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Crystal growth Nitrogen Oxygen law.invention Optical microscope chemistry law Thermal Single crystal
Zdroj:	MRS Proceedings. 262
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-262-57
Popis:	We investigated the effect of D-defect in CZ silicon single crystals on the oxygen precipitation by two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K and the second annealing in dry oxygen ambient at 1273K. The density of D-defect was measured by counting ‘flow patterns’ using an optical microscope after preferential etching in Secco's solution for 30 minutes. It was found that the amount of oxygen precipitation along the growth axis was not affected by D-defect. The predominant factor of the oxygen precipitation after the two-step thermal process is the nuclei of oxygen precipitation generated around 723K during CZ crystal growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2505d4dcd4656cf58bf876486dea8769 https://doi.org/10.1557/proc-262-57 Zobrazit plný text záznamu Full text from SpringerLink