Control of silica cap properties by oxygen plasma treatment for single-cap selective impurity free vacancy disordering

Autor:	S. K. Murad, J.S. Aitchison, S. E. Hicks, John H. Marsh, Chris D. W. Wilkinson, A. Saher Helmy, A.C. Bryce
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) Ion beam mixing chemistry Impurity Band gap Annealing (metallurgy) Vacancy defect Analytical chemistry chemistry.chemical_element Heterojunction Reactive-ion etching Oxygen
Zdroj:	Applied Physics Letters. 74:732-734
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.123106
Popis:	By exposing the SiO2 films used as annealing caps in the process of impurity free vacancy disordering (IFVD) to an oxygen plasma, which is produced in a reactive ion etching machine, the effect of the exposed caps on quantum well intermixing can be substantially controlled. The effect of the oxygen treatment is manifested in inhibiting the Ga outdiffusion from GaAs/AlGaAs heterostructures. A selective IFVD process using identical silica caps has been obtained by selective exposure of the caps to oxygen plasma. Differential band gap shifts in excess of 100 meV were achieved with control samples exhibiting band gap shifts less than 10 meV.
Databáze:	OpenAIRE
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