Er x Y 2-x SiO 5 nanocrystal and thin film for high gain per length material

Autor: Moon-Seung Yang, Kiseok Suh, Jee Soo Chang, Shinyoung Lee, Heeyoung Go, Jung H. Shin
Rok vydání: 2008
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.764400
Popis: We report on fabricating Er x Y 2-x SiO 5 nanocrystals using ErCl 3 •6H 2 O and YCl 3 •6H 2 O solutions and Si nanowires grown by VSL method. Use of crystalline host allows incorporation of up to 25 at % Er without clustering and loss of optical activity, and use of Y enables continuous mixing of Er and Y for controlling cooperative upconversion. We obtain a cooperative upconversion coefficients of (2.2±1.1)×10 -18 cm 3 /s and (5.4±2.7)×10 -18 cm 3 /s at an Er concentration of 1.2×10 21 cm -3 and 2.0×10 21 cm -3 , respectively. These values are up to 10 times lower at 10 times higher Er concentration than those reported for Er-doped silica, and shows that up to 69 dB/cm gain could be achieved for ultra-compact optical amplification. Also, we report on the deposition of Er x Y 2-x SiO 5 thin film on Si substrate using ion beam sputter deposition. Rapid thermal annealing at 1100°C is enough to form crystal phase the film and activate most of Er 3+ ions.
Databáze: OpenAIRE