Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure
| Autor: | Hongjong Park, Jun-Seok Jeong, Dong-Hwan Kim, Ho-Young Cha, Kwang-Seok Seo, Su-Keun Eom |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Transistor Wide-bandgap semiconductor 020206 networking & telecommunications Gallium nitride 02 engineering and technology High-electron-mobility transistor 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Ka band Electrical and Electronic Engineering business Monolithic microwave integrated circuit High-κ dielectric |
| Zdroj: | IEEE Electron Device Letters. 39:995-998 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2018.2834223 |
| Popis: | This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal–insulator–semiconductor (MIS) structure with SiN x /HfON dual dielectric layers. The fabricated 0.15- $\mu \text{m}$ AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz. |
| Databáze: | OpenAIRE |
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