Strong anisotropy of the resistive transition in Bi‐Sr‐Ca‐Cu‐O thin films prepared by metalorganic chemical vapor deposition

Autor:	D. J. Baar, Koichi Nakao, Tsunemi Sugimoto, Shigenori Yuhya, Shoji Tanaka, Yuh Shiohara
Rok vydání:	1991
Předmět:	Superconductivity High-temperature superconductivity Physics and Astronomy (miscellaneous) Chemistry Analytical chemistry Mineralogy Chemical vapor deposition law.invention Carbon film Electrical resistivity and conductivity law Metalorganic vapour phase epitaxy Thin film Critical field
Zdroj:	Applied Physics Letters. 59:2451-2453
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.105992
Popis:	The resistivity of the Bi‐Sr‐Ca‐Cu‐O thin films deposited by MOCVD (metalorganic chemical vapor deposition) has been investigated. Samples of thickness from 5 to 300 nm have been studied. Zero resistance temperatures (Tc0) for all samples were about 70 K. For all samples, Tc0 was nearly independent of magnetic fields up to 6 Tesla applied parallel to the film surface. In contrast, Tc0 decreased significantly in fields applied perpendicular to the film surface. We suspect this difference to originate in the nonpenetration of flux quanta (due to the large effective lower critical field for thin film in the parallel field case) and in the potential barrier to flux penetration at the surface of the thin films in addition to the natural anisotropy of the Bi‐based superconductors.
Databáze:	OpenAIRE
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