Auger electron spectroscopy studies of near‐interface SiO2

Autor:	M. A. Sobolewski, C. R. Helms
Rok vydání:	1985
Předmět:	Auger electron spectroscopy Silicon Chemistry Analytical chemistry Oxide chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Auger chemistry.chemical_compound Band bending Xenon Sputtering
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:1300-1304
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.573050
Popis:	The Auger electron spectra of thin (3–30 A) thermal films of SiO2 on Si were measured. Xenon ion sputtering was also used to provide depth profiles of these films. A feature in the Si LVV Auger spectrum previously attributed to intermediate oxidation states of silicon (SiOx) within 1–2 monolayers of the interface was observed. In addition, the presence of a ‘‘near interface SiO2’’ region where the SiO2 spectra are shifted from their thick SiO2 values has been observed. During sputter profiling of 30 A films these energies shift from positions close to their thick oxide values to values approximately 5 V higher at the interface. These shifts are observed even without sputtering: the 3 A oxide has a Si KLL peak energy 3.2 V higher than the 30 A sample, and O KLL peak energy 3.5 V higher, and Si LVV peak 2.0 V higher, after correcting for band bending in the substrate. These shifts can be attributed to a change in the relaxation energy of the oxide whose physical origin is not as yet understood.
Databáze:	OpenAIRE
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