Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 μJ laser diode
| Autor: | Cheng Ma, Huan Jiang, Luyi Wang, Juncheng Cao, Pengbo Xue, Wei Shi, Huaimeng Gui, Mengxia Li, Zhanglong Fu |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Laser diode Physics::Instrumentation and Detectors business.industry Cathode law.invention Anode Gallium arsenide Semiconductor laser theory chemistry.chemical_compound Optics Semiconductor chemistry law Electric field Perpendicular Optoelectronics business |
| Zdroj: | Applied Physics Letters. 104:042108 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | A 3-mm-gapped GaAs photoconductive semiconductor switch is triggered by a 1.6 μJ laser diode. Effects of the rectangular spot's layout and the triggering position on the electric field threshold of nonlinear mode are investigated. As the illuminated position moves from the cathode to the anode, the effective illumination optical energy varies. In that case, when the rectangular spot is perpendicular to two electrodes the electric field threshold increases linearly. And when the rectangular spot is parallel to the electrodes, the electric field threshold exhibits an asymmetric parabola-like curve. |
| Databáze: | OpenAIRE |
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